Quantum Effects for Spintronic Devices Optimization

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Beschreibung

This work is mainly dedicated to the study of spin dependent transport in magnetic nanostructures. The principal objective is the optimization of the magnetoresistive performance of such structures, in order to built high density Magnetic Random Access Memories (MRAM). Nevertheless, new resistive properties are also found, that could be useful for another type of non-volatile memory device, in this case, Resistive Random Access Memories (ReRAM). The book is basically divided into two parts: the first one considers the theoretical analysis of perfect multilayered magnetic junctions with quantum coherent transport (in the context of Landauer formula), revealing an impressive enhancement of the magnetoresistance, in the so called shallow band regime; the second one is dedicated to the experimental study of magnetic granular multilayers, ten granular Co80Fe20 layers embedded into an insulating Al2O3 matrix, showing interesting resistive and capacitive switching properties, and complemented by a theoretical description of percolation charge transport in these materials (using a mean-field approach).

Autorentext

Hugo Manuel Gonçalves da Silva made his PhD at the University of Porto (Portugal) in 2009. Since then up to now (January 2013) he is working as post-doctoral researcher at the Geophysical Centre of Évora (Portugal). He lectured in University of Évora (2012) and University of Porto (2005). In 2010 he received Calouste Gulbenkian Foundation price.

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Produktinformationen

Titel
Quantum Effects for Spintronic Devices Optimization
Untertitel
From perfect multilayered magnetic tunnel junctions to granular magnetic multilayers, new ideas in Spintronics
Autor
EAN
9783659325069
ISBN
978-3-659-32506-9
Format
Kartonierter Einband
Herausgeber
LAP Lambert Academic Publishing
Genre
Physik & Astronomie
Anzahl Seiten
196
Gewicht
g
Größe
H220mm x B220mm x T150mm
Jahr
2013
Untertitel
Englisch
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