Modeling and Simulation of Czochralski Bulk Crystal Growth Process

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Beschreibung

The main objective of this book aims at developing
a new generation of software product, in order to
obtain a fully automatic simulator predicting the
entire Czochralski process.

Firstly, new efficient, robust and high-quality mesh
generation algorithms for any complex geometry were
implemented.

A Finite Element Navier-Stokes solver based on
unstructured meshes was developed. Enhanced
turbulence models, together with a generic
transformation method to avoid negative k when
solving the turbulent kinetic energy equation by the
Newton-Raphson method were implemented. Moreover,
mathematical models governing the gas convection and
oxygen distribution in the silicon melt were
developed, and numerical methods to solve these
governing equations were implemented, while
appropriate numerical approaches to capture the wall
shear stress along the meniscus experienced by the
silicon melt were investigated.

Numerical experiments devoted to investigate the
industrial Czochralski process are presented.
Comparisons of the simulation results with literature
and experimental observations are also presented, and
conclusions are drawn based on these results and
observations.

Autorentext

Dr. Liang Wu has enormous experience in crystal growth Hot-zonedesign and process optimization through numerical modeling andsimulation. He received his Ph.D degree from the CatholicUniversity of Louvain, Belgium, master degree from the TsinghuaUniversity, and bachelor degree from the Dalian University ofTechnology, P.R.China, respectively.



Klappentext

The main objective of this book aims at developinga new generation of software product, in order toobtain a fully automatic simulator predicting theentire Czochralski process.Firstly, new efficient, robust and high-quality meshgeneration algorithms for any complex geometry wereimplemented.A Finite Element Navier-Stokes solver based onunstructured meshes was developed. Enhancedturbulence models, together with a generictransformation method to avoid negative k whensolving the turbulent kinetic energy equation by theNewton-Raphson method were implemented. Moreover,mathematical models governing the gas convection andoxygen distribution in the silicon melt weredeveloped, and numerical methods to solve thesegoverning equations were implemented, whileappropriate numerical approaches to capture the wallshear stress along the meniscus experienced by thesilicon melt were investigated.Numerical experiments devoted to investigate theindustrial Czochralski process are presented.Comparisons of the simulation results with literatureand experimental observations are also presented, andconclusions are drawn based on these results andobservations.

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Produktinformationen

Titel
Modeling and Simulation of Czochralski Bulk Crystal Growth Process
Untertitel
Investigation of Transport Effects in Melt and Gas Phases
Autor
EAN
9783639132915
ISBN
978-3-639-13291-5
Format
Kartonierter Einband
Herausgeber
VDM Verlag Dr. Müller
Genre
Physik & Astronomie
Anzahl Seiten
192
Gewicht
305g
Größe
H11mm x B220mm x T150mm
Jahr
2009
Untertitel
Englisch
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